A fully integrated 5 . 3 GHz , 2 . 4 V , 0 . 3 W SiGe - Bipolar Power Amplifier with 50 L ? output
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چکیده
@iR. ..... ........... VCCD PE ....... ........ Q ........... vcc GND ............ ........... ......... A radio frequency power amplijier for 4.8-5.7GHz has been realized in a 0.25 pm SiGe-bipolar technology. The balanced 2-stage push-pull power amplger uses two onchip transformers as input-balun and for interstage matching. Further it uses three coils for the integrated LC-output balun and the rf-choke. Thus the power amplijier is free of any external components. At 1.0 1.5 2.4 V supply voltages outputpowers of I7.7dBm, 21.6dBm, 25dBm are achieved at 5.3 GHz. The respective power added efficiency is 15.6 %, 22.4 %, 24 %. The small-signal gain is 26 dB.
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